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Composite Transistors
XP0121E
Silicon NPN epitaxial planer transistor
Unit: mm
2.10.1 0.425 1.250.1 0.425
0.20.05 0.12 - 0.02
+0.05
For switching/digital circuits
0.65
s Features
q q
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.00.1
1 2 3
5
0.65
4
0.9 0.1
q
UN121E x 2 elements
0.70.1
s Basic Part Number of Element
0.2
0 to 0.1
0.20.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25C)
Ratings 50 50 100 150 150 -55 to +150 Unit V V mA mW C C
1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2)
4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC-88A S-Mini Type Package (5-pin)
Marking Symbol: AQ Internal Connection
1 2 3 4 Tr1 5
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency
*1
(Ta=25C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE = -2mA, f = 200MHz Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 6V, RL = 1k -30% 47 2.14 150 MHz 4.9 0.2 +30% 60 0.5 0.99 0.25 V V V k min 50 50 0.1 0.5 0.2 typ max Unit V V A A mA
Ratio between 2 elements
1
Composite Transistors
PT -- Ta
250
XP0121E
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (C)
IC -- VCE
60
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10
Collector to emitter saturation voltage VCE(sat) (V)
30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.1 25C
50
Forward current transfer ratio hFE
IB=1.0mA 0.7mA Ta=25C 0.9mA 0.6mA 0.8mA
160 VCE=10V
Collector current IC (mA)
120
Ta=75C 25C -25C
40 0.3mA 0.4mA 0.5mA 0.2mA
30
80
0.1mA 20
40
10
-25C
0 0 2 4 6 8 10 12
0
0.3 1 3 10 30 100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C
10000 3000 VO=5V Ta=25C 100 30
VIN -- IO
VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 1.5
2.0
2.5
3.0
3.5
4.0
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2

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